PROCESS TECHNOLOGY:

Epi Growth
Reactors: Gemini 3E Epi Reactors
Process: Atmospheric Pressure or Reduced Pressure
Silicon Source: SiHCI3 (Standard); SiH2CI2 (Option)
Dopant: N-Type (Phosphorous) or P-Type (Boron)
Layer Structure: *Single Layer: N/N+, P/P+, P/N+, N/P+, etc.
                         *Multiple Layers: N/N+/P+, N/N/N+, P/P/P+, P/N/N+, etc.

Layer Resistivity
Range: 0.1 ohm-cm to 10,000 ohm-cm
Standard Tolerance: 0.1 to 10.0 ohm-cm +7%; 10.0 to 30.0 ohm-cm +10%;
                              30.0 to 150 ohm-cm +15%
Measurements: Four-point probe; Hg C-V; SRP

Layer Thickness
Range: 1.0 to 150.0 microns
Standard Tolerance: +10%
Measurement: FTIR; SRP

Capability
4"(100mm) to 8"(200mm) substrate wafer size