Our specialty at Advanced EPI Technology is in the thick Epitaxial Film (>20 micron) as well as in the multiple Epitaxial Layer deposition designed for high voltage MOSFET or IGBT devices application. We have also developed an ultra-high resistivity (UHR) epi layer on a heavily doped substrate wafer.

Our equipment includes Gemini 3Es: Induction heating EPI Reactor with an individual three-port injection feature.

A brief history:
March 1996: Company founded in Fremont, California, USA.
September 1996: AET produced their first Silicon Epi wafer.
January 1997: Began Silicon Epi wafer mass production.
October 1997: Installed first Gemini IV epi reactor.
October 2000: ISO 9002-1994 certified.
September 2003:	A paper on MIS sensors based on AET's UHR epi layer presented on the European Solid-State Electronic Devices Conference (ESSDERC) in Lisbon, Portugal. Read it here.
October 2003: ISO 9001-2000 certified.